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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS(on)=2 ZVN2106G D S COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP2106G ZVN2106 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 710 8 20 2.0 -55 to +150 UNIT V mA A V W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. MAX. UNIT CONDITIONS. BV DSS V GS(th) I GSS I DSS 60 0.8 2.4 20 500 100 2 2 300 75 45 20 7 8 12 15 V V nA nA A A mS pF pF pF ns ns ns ns V DD 18V, I D=1A V DS=18 V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125C(2) V DS=18V, V GS=10V V GS=10V,I D=1A V DS=18V,I D=1A On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) ReverseTransfer Capacitance(2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 385 ZVN2106G TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) 4 VDD= 20V 30V 50V ID=3A VGS-Gate Source Voltage (Volts) VGS= 10V 9V 8V 7V 16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 3 2 6V 5V 4V 1 0 0 1 2 3 4 5 3V 2.0 2.5 3.0 VDS - Drain Source Voltage (Volts) Q-Charge (nC) Saturation Characteristics RDS(ON) -Drain Source On-Resistance () Gate charge v gate-source voltage 100 80 10 C-Capacitance (pF) 60 Ciss 40 1 ID= 1A 0.5A 0.25A 20 Coss Crss 0 10 20 30 40 50 0.1 1 10 20 VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Capacitance v drain-source voltage On-resistance v gate-source voltage 2.4 0.7 Normalised RDS(on) and VGS(th) gfs-Transconductance (S) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20 Gate Thresh old D in ra ou -S rc e sis Re n ta ce ) on S( RD 0.6 0.5 0.4 0.3 0.2 0.1 0 VDS=10V VGS=10V ID=1A VGS=VDS ID=1mA Voltage VGS (th) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 Tj-Junction Temperature (C) ID- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current 3 - 386 |
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